Nakamura, H*; Rungger, I; Sanvito, S*; Inoue, N*; Tominaga, J*; Asai, Y* (2017) Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale, 9 (27). pp. 9386-9395.

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Abstract

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Item Type:	Article
Subjects:	Quantum Phenomena Quantum Phenomena > Nanophysics
Divisions:	Quantum Science
Identification number/DOI:	10.1039/c7nr03495d
Last Modified:	02 Feb 2018 13:13
URI:	https://eprintspublications.npl.co.uk/id/eprint/7653