Werner, Z*; Szymczyk, W*; Piekoszewski, J*; Seah, M P; Ratajczak, R*; Nowicki, L*; Barlak, M*; Richter, E* (2009) Stoichiometric MgB2 layers produced by multiple-energy implantation of boron into magnesium. Surf. Coat. Technol., 203 (17-18). pp. 2712-2716.

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Abstract

Manufacturing of superconducting MgB2 films in Mg by high-fluence boron implantation requires a precise knowledge of ion implantation properties, in particular of partial sputtering yields of magnesium atoms by boron ions. To determine this yield experimentally, thin films of magnesium were deposited on glassy carbon targets and implanted with high fluencies of boron at energies of 40, 60, and 80 keV. The RBS spectra of the implanted layers were RUMP-analysed to obtain before- and after-implantation profiles of magnesium and boron. The sputtering yields turned out to be very small. They did not exceed 0.1 atoms/ion and may be thus easily ignored in simulations of the implantation profiles. The procedure developed on the basis of this conclusion allow us to optimise the implanted profiles from the view point of the final atomic concentrations. It has been demonstrated that the experimental profiles resulting from multiple-energy implantation exhibit flat ¿plateaus¿ with stoichiometric MgB2 composition.

Item Type:	Article
Keywords:	sputtering yield, ion implantation, RBS, magnesium diboride, implantation profiles
Subjects:	Nanoscience
Last Modified:	02 Feb 2018 13:15
URI:	https://eprintspublications.npl.co.uk/id/eprint/4410