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Practical guides for X-ray photoelectron spectroscopy: use of argon ion beams for sputter depth profiling and cleaning

Shard, A G; Baker, M A (2024) Practical guides for X-ray photoelectron spectroscopy: use of argon ion beams for sputter depth profiling and cleaning. Journal of Vacuum Science & Technology A, 42 (5). 050801

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Abstract

Ion beams are used in X-ray photoelectron spectroscopy (XPS) to clean samples and perform compositional sputter depth profiles. The purpose of this article is to compile good practice, recommendations, and useful information related to the use of argon ion sources for inexperienced users of XPS instrumentation. The most used type of ion source generates monoatomic argon ions at a range of energies from a fixed direction relative to the instrument. The angle and direction of the ion beam with respect to the surface is normally altered by manipulating the sample and this may involve tilting the sample to change the angle of incidence or rotating the sample to change the azimuthal incidence angle. Atomic argon ion beams cause damage to the structure of the material surface which may exhibit itself as a change in stoichiometry or topography as well as the implantation of argon atoms. Therefore, caution is required in the interpretation of XPS depth profiles. The advent and wide uptake of gas cluster ion sources offers new possibilities and choices to XPS users. Gas cluster sources enable the sputtering of organic materials with high yield in comparison to inorganic materials and offer the potential for nearly damage-free depth profiling of delicate organic materials as well as low damage cleaning of inorganic materials. It may be possible to use argon clusters to reduce damage during the depth profiling of inorganic materials, but there is currently insufficient evidence to make any general recommendations.

Item Type: Article
Subjects: Nanoscience > Surface and Nanoanalysis
Divisions: Chemical & Biological Sciences
Identification number/DOI: 10.1116/6.0003681
Last Modified: 23 Oct 2024 13:08
URI: https://eprintspublications.npl.co.uk/id/eprint/10083
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