Nakamura, H*; Rungger, I; Sanvito, S*; Inoue, N*; Tominaga, J*; Asai, Y* (2017) Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale, 9 (27). pp. 9386-9395.
Full text not available from this repository.Abstract
No abstract available
Item Type: | Article |
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Subjects: | Quantum Phenomena Quantum Phenomena > Nanophysics |
Divisions: | Quantum Science |
Identification number/DOI: | 10.1039/c7nr03495d |
Last Modified: | 02 Feb 2018 13:13 |
URI: | http://eprintspublications.npl.co.uk/id/eprint/7653 |
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