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Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states.

Nakamura, H*; Rungger, I; Sanvito, S*; Inoue, N*; Tominaga, J*; Asai, Y* (2017) Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale, 9 (27). pp. 9386-9395.

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Abstract

No abstract available

Item Type: Article
Subjects: Quantum Phenomena
Quantum Phenomena > Nanophysics
Divisions: Quantum Science
Identification number/DOI: 10.1039/c7nr03495d
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/7653

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