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Fabrication of a monolithic array of three dimensional Si-based ion traps.

See, P; Wilpers, G; Gill, P; Sinclair, A G (2013) Fabrication of a monolithic array of three dimensional Si-based ion traps. J. Microelectrochem. Syst., 22 (5). pp. 1180-1189.

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Segmented linear ion trap arrays are versatile devices that are increasingly used to study quantum physics and demonstrate the fundamental principles of quantum information processing. Traps with three-dimensional (3D) electrode geometries can create a superior confining potential for ions. However, the realization of a monolithic 3D micro-chip trap with a scalable fabrication technology remains challenging. In this paper the microfabrication of a monolithic array of 3D ion microtraps in a semiconductor chip is presented. The electrode structure is formed by micromachining a silica-on-silicon wafer and metallizing the dielectric with gold. The fabrication method uses conventional semiconductor wafer processing tools and techniques. The specific operating characteristics which demonstrate the suitability of the chosen material system and fabrication process are presented.

Item Type: Article
Keywords: ion trap, microelectromechanical systems, quantum information processing, semiconductor devices
Subjects: Quantum Phenomena
Time and Frequency
Quantum Phenomena > Quantum Information Processing and Communication
Time and Frequency > Optical Frequency Standards and Metrology
Identification number/DOI: 10.1109/JMEMS.2013.2262573
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/5947

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