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A monolithic array of three-dimensional ion traps fabricated with conventional semiconductor technology.

Wilpers, G; See, P; Gill, P; Sinclair, A G (2012) A monolithic array of three-dimensional ion traps fabricated with conventional semiconductor technology. Nature Nanotechnol., 7 (9). pp. 572-576.

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Abstract

Trapped ions are at the forefront of experimental developments in quantum information, quantum metrology, and quantum simulation. Schemes demonstrating high fidelity quantum entanglement remain limited to less than ten qubits, and progress towards larger systems of qubits requires a scalable architecture. In this regard, the development of scalable ion trap arrays is paramount. While traps consisting of a two-dimensional electrode array have attracted significant interest, three-dimensional (3D) trap geometries are the optimal configuration for storage and manipulation of ions. Indeed, the most advanced experiments with trap arrays have been performed using a 3D geometry, however those traps were non-scalable devices. Here we report a novel monolithic 3D ion microtrap array, etched from a silica-on-silicon wafer using scalable semiconductor fabrication techniques. 88Sr+ ions have been confined individually and in strings, and motional frequencies, ion heating rate and storage times have been measured. Our results show that the microtrap is an ideal device for realising a scalable system containing several tens of ion qubits. The principle of the device points to new possibilities for realising distributed and interconnected quantum processors.

Item Type: Article
Keywords: atomic physics, quantum optics, quantum information, ion traps, microfabrication
Subjects: Quantum Phenomena
Quantum Phenomena > Quantum Information Processing and Communication
Identification number/DOI: 10.1038/NNANO.2012.126
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/5617

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