< back to main site


Towards passive terahertz imaging using a semiconductor quantum dot sensort.

Kleinschmidt, P; Kulik, L*; Antonov, V*; Tzalenchuk, A; Giblin, S P (2007) Towards passive terahertz imaging using a semiconductor quantum dot sensort. In: IRMMV- 2007 International Conference on Infrared, Millimeterwave and Terrahertz, 2007.

Full text not available from this repository.


Passive terahertz imaging with high spectral sensitivity can be performed using a low temperature sensor coupled to an optical system delivering radiation from a room temperature source. We have studied this system having regard for an application to security screening and material analysis. Different types of low temperature sensors based on GaAs/AlGaAs quantum-dots have been designed and characterised. The most sensitive sensor, which is able to detect individual terahertz photons, consists of a quantum-dot coupled to a metallic single electron transistor (SET). This sensor requires state-of-the-art nanofabrication. A more robust, but less sensitive sensor, with relaxed nanofabrication demands is also under development. The spectral sensitivity of the system is determined by the excitation spectrum of the quantum-dot and the spectral characteristics of the antenna. We report on the performance of a combination of a traditional log-periodic with a near-field antennae coupled to the quantum-dot. We find that a near-field antenna substantially improves the spectral resolution of the sensor.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Keywords: Quantum Dot, THz Imaging
Subjects: Quantum Phenomena
Quantum Phenomena > Quantum Information Processing and Communication
Last Modified: 02 Feb 2018 13:15
URI: http://eprintspublications.npl.co.uk/id/eprint/3962

Actions (login required)

View Item View Item