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A highly sensitive terahertz photon detector based on a semiconductor quantum dot.

Kleinschmidt, P; Giblin, S P; Tzalenchuk, A; Kulik, L*; Antonov, V* (2007) A highly sensitive terahertz photon detector based on a semiconductor quantum dot. In: IRMMV- 2007 International Conference on Infrared, Millimeterwave and Terrahertz, 2007.

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Abstract

We have developed a detector for photons in the terahertz region consisting of a lateral semiconductor quantum-dot (QD), defined in the two-dimensional electron gas (2-DEG) of a mesa-patterned heterostructure using three metallic gates, and a metallic single-electron transistor (SET) fabricated on top of the mesa. The SET is capacitively coupled to the quantum-dot. THz photons can be absorbed by the quantum dot resulting in excitations associated with a change in charge-state of the quantum- dot, which can be detected directly as a change in the conductance of the SET. We characterize the detector by using radiation from a black-body emitter at the 1 K stage of our apparatus. Operation of the detector at a temperature of 300 mK is demonstrated and the noise equivalent power (NEP) is estimated to be of the order of 10^-19 W/rtHz based on a dark count rate of 0.1/s and a quantum efficiency of the order of 0.1 %.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Quantum Phenomena
Quantum Phenomena > Quantum Information Processing and Communication
Last Modified: 02 Feb 2018 13:15
URI: http://eprintspublications.npl.co.uk/id/eprint/3961

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