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Quantized charge pumping through a quantum dot by surface acoustic waves.

Ebbecke, J; Fletcher, N E; Janssen, T J B M; Ahlers, F J*; Pepper, M*; Beere, H E*; Ritchie, D A* (2004) Quantized charge pumping through a quantum dot by surface acoustic waves. Appl. Phys. Lett., 84 (21). pp. 4319-4321.

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Abstract

We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through the dot at a frequency f = 3 GHz. The pumped current shows a regular pattern of quantization at values I = ne f over a range of gate voltage and wave amplitude settings. The observed values of n, the number of electrons transported per wave cycle, are determined by the number of electronic states in the quantum dot brought into resonance with the Fermi level of the electron reservoirs during the pumping cycle.

Item Type: Article
Keywords: single electron transport
Subjects: Quantum Phenomena
Quantum Phenomena > Quantum Information Processing and Communication
Last Modified: 02 Feb 2018 13:16
URI: http://eprintspublications.npl.co.uk/id/eprint/2941

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