Russell, A; Zotov, A; Zhao, R; Dzurak, A S; Fernando Gonzalez-Zalba, M; Rossi, A (2023) Gate-Based Spin Readout of Hole Quantum Dots with Site-Dependent g-Factors. Physical Review Applied, 19 (4). 044039 ISSN 2331-7019

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Abstract

The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturing standards, the ease of operation and addressability via all-electric drives, as well as the use of compact reflectometry readout protocols. However, owing to a strong spin orbit interaction, these systems present variability, anisotropy or inhomogeneity in key qubit control parameters such as the g−factor or the coupling between basis states. Here, we show that reflectometry readout can be used as a tool to elucidate some of these aspects. We experimentally investigate a hole double quantum dot in silicon by means of microwave- and magneto-spectroscopy and read its spin states with gate-based reflectometry. We show that a non-monotonic dependence of the readout signal on magnetic field is the hallmark of site-dependent g−factors in the two dots. Using analytical modeling and numerical calculations, we extract the physical parameters of our system and predict a general set of g−factor values for which the non-monotonicity arises.

Item Type:	Article
Subjects:	Quantum Phenomena > Quantum Information Processing and Communication
Divisions:	Quantum Technologies
Identification number/DOI:	10.1103/PhysRevApplied.19.044039
Last Modified:	25 Mar 2026 15:10
URI:	https://eprintspublications.npl.co.uk/id/eprint/10360