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Zhong, X L*; Rungger, I; Zapol, P*; Nakamura, H*; Asai, Y*; Heinonen, O* (2016) The effect of Ta oxygen scavenger layer on HfO2-based resistive switching behavior: thermodynamic stability, electronic structure, and low-bias transport. Phys. Chem. Chem. Phys., 18 (10). pp. 7502-7510.