Zhong, X*; Rungger, I; Zapol, P*; Heinonen, O* (2016) Oxygen-modulated quantum conductance for ultra-thin HfO2-based memristive switching devices. Phys. Rev. B, 94 (16). 165160

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Abstract

Memristive switching devices, candidates for resistive random access memory technology, have been shown to switch off through a progression of states with quantized conductance and subsequent non-integer conductance (in terms of conductance quantum G0). We have performed calculations based on density functional theory to model the switching process for a Pt-HfO2-Pt structure, involving the movement of one or two oxygen atoms. Oxygen atoms moving within a conductive oxygen vacancy filament act as tunneling barriers, and partition the filament into weakly coupled quantum wells. We show that the low-bias conductance decreases exponentially when one oxygen atom moves away from interface. Our results demonstrate the high sensitivity of the device conductance to the position of oxygen atoms.

Item Type:	Article
Keywords:	non-volatile memory technology, memristors, nanotechnology, density functional theory, quantum transport
Subjects:	Advanced Materials Advanced Materials > Materials Modelling
Identification number/DOI:	10.1103/PhysRevB.94.165160
Last Modified:	02 Feb 2018 13:13
URI:	http://eprintspublications.npl.co.uk/id/eprint/7297

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