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Items where Author is "Inoue, N*"
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Nakamura, H*; Rungger, I; Sanvito, S*; Inoue, N*; Tominaga, J*; Asai, Y* (2017) Resistive switching mechanism of GeTe-Sb2Te3 interfacial phase change memory and topological properties of embedded two-dimensional states. Nanoscale, 9 (27). pp. 9386-9395.