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A Technique to Improve Accuracy of S-Parameter Measurements of Coaxial Connectorized Devices at Cryogenic Temperatures

Stanley, M; Celep, M; Elarabi, A; Salter, M; Singh, D; Skinner, J; Shin, S-H; Ridler, N M (2025) A Technique to Improve Accuracy of S-Parameter Measurements of Coaxial Connectorized Devices at Cryogenic Temperatures. IEEE Transactions on Instrumentation and Measurement, 74. pp. 1-12. ISSN 0018-9456

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Abstract

Recent developments in microwave-based quantum computing technologies have motivated the need for the development of new and improved cryogenic microwave devices packaged in coaxial connectorized technology, and for their performance to be accurately characterized through S-parameter measurements made at cryogenic operating temperatures. To facilitate such accurate characterization, S-parameter measurement systems utilizing in situ calibration techniques at cryogenic temperatures have been developed. This required the use of cryogenic RF switches inside cryostats to select between calibration standards and devices to perform calibration and measurement in a single cooling cycle. However, this caused significant measurement errors due to nonidentical signal paths, due to differences in switch paths, which limited the measurement accuracy of such measurement systems. In this work, a new technique is proposed to significantly improve the accuracy of cryogenic S-parameter measurements of coaxial connectorized devices by accounting for nonideal effects in such switch-based cryogenic calibration units. The technique is demonstrated at room temperature (296 K) and cryogenic temperature (1.5 K) through S-parameter measurements of coaxial devices with up to two ports.

Item Type: Article
Subjects: Electromagnetics > RF and Microwave
Divisions: Electromagnetic & Electrochemical Technologies
Identification number/DOI: 10.1109/TIM.2025.3595257
Last Modified: 12 Jun 2026 08:53
URI: https://eprintspublications.npl.co.uk/id/eprint/10441
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