Najda, S P; Perlin, P; Suski, T; Stanczyk, S; Kafar, A; Leszczynski, M; Schiavon, D; Slight, T; Gwyn, S; Watson, S; Kelly, A; Knapp, M; Haji, M (2023) GaN laser diodes for quantum sensing, optical atomic clocks, precision metrology, and quantum computing. Proceedings of the SPIE, 12517. 125170A

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Abstract

Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the U.V. to the visible. We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth, wavelength and power requirements suitable for quantum sensors such as optical clocks and cold-atom interferometry systems. This includes the [5s2S1/2-5p2P1/2] cooling transition in strontium+ ion optical clocks at 422 nm, the [5s2 1S0-5p1P1] cooling transition in neutral strontium clocks at 461 nm and the [5s2 s1/2 – 6p2P3/2] transition in rubidium at 420 nm. Several approaches are taken to achieve the required linewidth, wavelength and power, including an extended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaN laser diode.

Item Type:	Article
Subjects:	Time and Frequency > Microwave Frequency Standards
Divisions:	Time & Frequency
Publisher:	SPIE
Identification number/DOI:	10.1117/12.2655899
Last Modified:	24 Feb 2026 15:05
URI:	https://eprintspublications.npl.co.uk/id/eprint/10296