Naftaly, M; Chick, S; Matmon, G; Murdin, B (2021) Refractive Indices of Ge and Si at Temperatures between 4–296 K in the 4–8 THz Region. Applied Sciences, 11 (2). 487 ISSN 2076-3417

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Abstract

Refractive indices of high resistivity Si and Ge were measured at temperatures between 4–296 K and at frequencies between 4.2–7.7 THz using a Fourier-transform spectrometer (FTS) in
transmission mode. A phenomenological model of the temperature dependence of the refractive index is proposed.

Item Type:	Article
Keywords:	terahertz; refractive index; temperature dependence; silicon; germanium
Subjects:	Optical Radiation and Photonics > Materials and Appearance
Divisions:	Electromagnetic & Electrochemical Technologies
Identification number/DOI:	10.3390/app11020487
Last Modified:	22 Sep 2023 09:30
URI:	https://eprintspublications.npl.co.uk/id/eprint/9146