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Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices

Hou, H; Chung, Y; Rughoobur, G; Hsiao, T K; Nasir, A; Flewitt, A J; Griffiths, J P; Farrer, I; Ritchie, D A; Ford, C J B (2018) Experimental verification of electrostatic boundary conditions in gate-patterned quantum devices. Journal of Physics D: Applied Physics, 51 (24). 244004 ISSN 0022-3727

Full text not available from this repository.
Item Type: Article
Subjects: Quantum Phenomena > Nanophysics
Divisions: Quantum Science
Identification number/DOI: 10.1088/1361-6463/aac376
Last Modified: 17 Jul 2018 14:38
URI: http://eprintspublications.npl.co.uk/id/eprint/8036

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