Liu, F*; Husain, M K*; Li, Z*; Sotto, M S H*; Burt, D*; Fletcher, J D; Kataoka, M; Tsuchiya, Y*; Saito, S* (2017) Transport properties in silicon nanowire transistors with atomically flat interfaces. In: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 28 February - 2 March 2017, Toyama, Japan.
Full text not available from this repository.Abstract
No abstract available
Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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Subjects: | Quantum Phenomena Quantum Phenomena > Nanophysics |
Divisions: | Quantum Science |
Identification number/DOI: | 10.1109/EDTM.2017.7947561 |
Last Modified: | 02 Feb 2018 13:12 |
URI: | http://eprintspublications.npl.co.uk/id/eprint/7645 |
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