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Transport properties in silicon nanowire transistors with atomically flat interfaces.

Liu, F*; Husain, M K*; Li, Z*; Sotto, M S H*; Burt, D*; Fletcher, J D; Kataoka, M; Tsuchiya, Y*; Saito, S* (2017) Transport properties in silicon nanowire transistors with atomically flat interfaces. In: 2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 28 February - 2 March 2017, Toyama, Japan.

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Abstract

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Item Type: Conference or Workshop Item (UNSPECIFIED)
Subjects: Quantum Phenomena
Quantum Phenomena > Nanophysics
Divisions: Quantum Science
Identification number/DOI: 10.1109/EDTM.2017.7947561
Last Modified: 02 Feb 2018 13:12
URI: http://eprintspublications.npl.co.uk/id/eprint/7645

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