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Effect of disorder on Raman scattering of single-layer MoS2.

Mignuzzi, S; Pollard, A J; Bonini, N*; Brennan, B; Gilmore, I S; Pimenta, M A*; Richards, D*; Roy, D (2015) Effect of disorder on Raman scattering of single-layer MoS2. Phys. Rev. B, 91 (19). 195411

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We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ~227 cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer MoS2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in MoS2 and the D peak in graphene.

Item Type: Article
Keywords: single-layer MoS2, defects, ion-bombardment, Raman spectroscopy, phonon confinement, phonon dispersion, density functional theory
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1103/PhysRevB.91.195411
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6677

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