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Anisotropic magnetoresistance state space of permalloy nanowires with domain wall pinning geometry.

Corte-Leon, H; Nabaei, V*; Manzin, A*; Fletcher, J D; Krzysteczko, P*; Schumacher, H W*; Kazakova, O (2014) Anisotropic magnetoresistance state space of permalloy nanowires with domain wall pinning geometry. Sci. Rep., 4. p. 6045.

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Abstract

The domain wall-related change in the anisotropic magnetoresistance in L-shaped permalloy nanowires is measured as a function of the magnitude and orientation of the applied magnetic field. The magnetoresistance curves, compiled into so-called domain wall magnetoresistance state space maps, are used to identify highly reproducible transitions between domain states. Magnetic force microscopy and micromagnetic modelling are correlated with the transport measurements of the devices in order to identify different magnetization states. The analyses allows to determine the optimal working parameters for specific devices, such as the minimal field required to switch the whole device or the most appropriate angle for maximal separation of the pinning/depinning fields. Moreover, the complete state space maps can be used to predict evolution of nanodevices in magnetic field without a need of additional electrical measurements and for repayable initialization of magnetic sensors into a well-specified state.

Item Type: Article
Subjects: Quantum Phenomena
Quantum Phenomena > Nanophysics
Identification number/DOI: 10.1038/srep06045
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6306

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