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Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination.

Eless, V; Yakimova, R*; Pearce, R E (2014) Controlling the carrier concentration of epitaxial graphene by ultraviolet illumination. Mater. Sci. Forum, 778-78. pp. 1137-1141.

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Abstract

Silicon carbide (SiC) is a well-known material for UV detection however the effect of UV illumination on the electron donation between the substrate, interfacial or buffer layer and graphene is not well understood. The effect of ultraviolet (UV) illumination on the carrier concentration of an epitaxial graphene hall bar device is investigated by scanning Kelvin probe microscopy (SKPM) and transport measurements in ambient and vacuum conditions. Modulation of the carrier concentration is demonstrated and shown to be due to both substrate and environmental effects.

Item Type: Article
Subjects: Quantum Phenomena
Quantum Phenomena > Nanophysics
Identification number/DOI: 10.4028/www.scientific.net/MSF.778-780.1137
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6212

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