Ottaviano, L*; Continenza, A*; Profeta, G*; Impellizzeri, G*; Irrera, A*; Gunnella, R*; Kazakova, O (2011) Room temperature ferromagnetism in Mn-implanted amorphous Ge. Phys. Rev. B, 83 (13). 134426

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Abstract

2x1016 Mn+/cm2 100 keV ion implantation at liquid nitrogen temperature onto Ge(100) surfaces produces a perfect Mn dilution into a completely amorphised Ge layer (155 nm thickness and 4% average Mn concentration) as directly demonstrated by Mn K-edge X-ray Absorption Spectroscopy. SQUID investigations demonstrate that this diluted magnetic semiconductor system exhibits ferromagnetism up to room temperature. The magnetic response is explained within the model of percolation of bound polarons. First principle calculations on Mn doped amorphous Ge give a rationale to the experiments showing that disorder in the amorphous phase with the distortion of the Ge tetrahedra play a crucial role, favoring the Mn substitutional inclusion and, correspondingly, enhancing the magnetic response of the system.

Item Type:	Article
Subjects:	Nanoscience Nanoscience > Nano-Materials
Identification number/DOI:	10.1103/PhysRevB.83.134426
Last Modified:	02 Feb 2018 13:14
URI:	https://eprintspublications.npl.co.uk/id/eprint/5002