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Interface properties of Pb/InAs planar structures for Andreev spectroscopy.

Magnus, F*; Yates, K A*; Clowes, S K*; Miyoshi, Y*; Bugoslavsky, Y*; Cohen, L F*; Aziz, A*; Burnell, G*; Blamire, M G*; Josephs-Franks, P W (2008) Interface properties of Pb/InAs planar structures for Andreev spectroscopy. Appl. Phys. Lett., 92 (1). 012501

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Abstract

For Andreev spectroscopy to be a useful tool to detect spin accumulation in semiconductors, we show by simulation that there is a maximum value for the interface scattering parameter that can be tolerated. Three different fabrication routes for Pb/InAs planar junctions are explored and we find that the “etch-back” processing strategy is the most promising. Using the parameters extracted from the spectroscopic analysis, we find that the interface properties fall into four different regimes of behavior.

Item Type: Article
Subjects: Quantum Phenomena
Quantum Phenomena > Nanophysics
Last Modified: 02 Feb 2018 13:15
URI: http://eprintspublications.npl.co.uk/id/eprint/4990

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