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Cluster primary ion sputtering: correlations in secondary ion intensities in TOF SIMS.

Seah, M P; Gilmore, I S (2011) Cluster primary ion sputtering: correlations in secondary ion intensities in TOF SIMS. Surf. Interface Anal., 43 (1-2). pp. 228-235.

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A brief review is given of some of the behaviours of cluster primary ions in secondary ion mass spectrometry (SIMS). The increased secondary ion yields for cluster primary ions are covered as well as the raised sputtering threshold energies. For organic materials, the increase in intensity as the sputtering yield rises varies with the fragment mass through the spectrum. For Irganox 1010, the intensity of the deprotonated negative and the positive molecular ions increase as the square of the total ion yield. However, the intensity of intermediate fragments increase with a lower power, rising monatonically from unity at m/z ~400 to 2 at the molecular ion. The constitution of the Irganox 1010 spectra for Ar+, Bi+, and may be described by a basic spectrum such as that for Ar+ and two further 'spectra' which are product terms that multiply the intensity to a power defined by the cluster primary ion species, cluster number and energy. This resolution of the spectra into three components may be translated, for example, to the published data for Si where, for secondary ion clusters, the terms are very much simpler: one is a constant, the second is a single exponential term dependent of the energy deposition density and the third related to the cluster binding energy. Finally, for studying molecular structure, the use of cluster primary ions in G-SIMS is outlined. Here, the cluster primary ions are critical for analysing the weaker, high mass peaks.

Item Type: Article
Keywords: cluster sputtering, damage cross section, disappearance cross section, efficiency, G-SIMS, molecular ion yields, sputtering yields, static SIMS, thermal spike
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1002/sia.3491
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/4879

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