Seah, M P; Mulcahy, C P A*; Biswas, S* (2010) Non-linearities in depth profiling nanometre layers. J. Vac. Sci. Technol. B, 28 (6). pp. 1215-1221.

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Abstract

An analysis is made of the sputter depth profiling for ultra-thin silicon dioxide layers on silicon to evaluate the variation in the sputtering rate in the first few nanometres. Such changes in sputtering rate are important for the development of the analysis of nanoparticles. Cs+ ions are chosen as an example of a metal ion popular in secondary ion mass spectrometry (SIMS) studies that provides excellent depth resolution. It is found that, if it is assumed that the signal is linear with oxygen content, the sputtering rate falls rapidly, by a factor of 4.8, with an exponential decay near 1.2 nm when using 600 eV Cs+ ions at 60° incidence angle. The interface may be described by the integral of Dowsett's response function developed for SIMS depth profiling of delta layers with lu = 0.5 nm, ld = 0.7 nm and s = 0.4 nm, showing the excellent depth resolution. However, if published data for the non-linearity of the signal with oxygen content are used, the rapid change is still seen but with an initial sputtering rate that is reduced from the above 4.8 to 3.5 times that at equilibrium.

Item Type:	Article
Keywords:	AES, depth profiling, nanometres, SIMS, silicon dioxide, SiO2, sputtering, XPS
Subjects:	Nanoscience Nanoscience > Surface and Nanoanalysis
Identification number/DOI:	10.1116/1.3504592
Last Modified:	02 Feb 2018 13:15
URI:	http://eprintspublications.npl.co.uk/id/eprint/4806

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