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Artifacts in the Sputtering of Inorganics by C60 n+.

Lee, J L S; Seah, M P; Gilmore, I S (2008) Artifacts in the Sputtering of Inorganics by C60 n+. Appl. Surf. Sci., 255 (4). pp. 934-937.

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In the present study, the basic issues in C60n+ sputtering are studied using silicon, gold and platinum samples. Sputtering yield are measured over energies 5 < E < 30 keV, by sputtering micrometre sized craters on the surface of flat clean samples and measuring their volumes using atomic force microscopy (AFM). Net deposition of carbon occurs for all three materials at 5 keV, and is not specific to silicon which forms a carbide alloy. The threshold energy for net sputtering is dependent on the sputtering yield and the stopping power of the substrate. Away from the threshold, the sputtering yields agree well with Sigmund and Claussen's thermal spike model after allowance for the sputtering of the deposited carbon atoms. AFM images shows that the formation of surface topography is critical around the transition region between sputtering and deposition. Analysis of the bottom of a crater using imaging SIMS shows a significant enhancement of carbon clusters Cn- as well as SinCm-, indicating the importance of carbon deposition and implantation in a gradual mixed layer formed from sputtering. The thickness of this interface layer is shown to be approximately 5 nm.

Item Type: Article
Keywords: Sputtering, cluster ions, C60, carbon deposition, thermal spike, topography
Subjects: Nanoscience
Last Modified: 02 Feb 2018 13:15
URI: http://eprintspublications.npl.co.uk/id/eprint/4284

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