Salek, M; Celep, M; Weimann, T; Stokes, D; Shang, X B; Phung, G N; Kuhlmann, K; Skinner, J; Wang, Y (2022) Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor. IEEE Transactions on Instrumentation and Measurement, 71. 8002509

Full text not available from this repository.

Abstract

This paper presents the design, fabrication, and characterization of a D-band bolometric power sensor, used for millimetre-wave metrology. The sensor is a multilayer chip which is housed in a WR-6 waveguide flange. The sensor chip consists of a silicon substrate as a microwave absorber. The absorbed power raises the silicon temperature which heats a platinum thin film layer, resulting in thin film resistance change that can be used to measure the microwave power. The design, fabrication and characterization have been detailed. The sensor has a return loss of better than 15 dB across the entire D-band. The short-term and long-term time responses were measured and rise- and fall-time was obtained better than 1.8 ms. The sensor shows high power linearity between -10 dBm and +8 dBm. Frequency response of the sensor was measured highly linear, and it changes no more than 20% across the frequency band.

Item Type:	Article
Keywords:	Bolometric, characterization, D-band, metrology, millimeter wave, power sensor, WR 6.5 waveguide flange
Subjects:	Electromagnetics > RF and Microwave
Divisions:	Electromagnetic & Electrochemical Technologies
Identification number/DOI:	10.1109/TIM.2022.3159009
Last Modified:	15 Feb 2023 11:12
URI:	http://eprintspublications.npl.co.uk/id/eprint/9571

Actions (login required)

View Item