Salek, M; Celep, M; Weimann, T; Stokes, D; Shang, X B; Phung, G N; Kuhlmann, K; Skinner, J; Wang, Y (2022) Design, Fabrication, and Characterization of a D-Band Bolometric Power Sensor. IEEE Transactions on Instrumentation and Measurement, 71. 8002509
Full text not available from this repository.Abstract
This paper presents the design, fabrication, and characterization of a D-band bolometric power sensor, used for millimetre-wave metrology. The sensor is a multilayer chip which is housed in a WR-6 waveguide flange. The sensor chip consists of a silicon substrate as a microwave absorber. The absorbed power raises the silicon temperature which heats a platinum thin film layer, resulting in thin film resistance change that can be used to measure the microwave power. The design, fabrication and characterization have been detailed. The sensor has a return loss of better than 15 dB across the entire D-band. The short-term and long-term time responses were measured and rise- and fall-time was obtained better than 1.8 ms. The sensor shows high power linearity between -10 dBm and +8 dBm. Frequency response of the sensor was measured highly linear, and it changes no more than 20% across the frequency band.
Item Type: | Article |
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Keywords: | Bolometric, characterization, D-band, metrology, millimeter wave, power sensor, WR 6.5 waveguide flange |
Subjects: | Electromagnetics > RF and Microwave |
Divisions: | Electromagnetic & Electrochemical Technologies |
Identification number/DOI: | 10.1109/TIM.2022.3159009 |
Last Modified: | 15 Feb 2023 11:12 |
URI: | http://eprintspublications.npl.co.uk/id/eprint/9571 |
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