Zhang, Y*; Zhong, X L*; Vopson, M; Wang, J B*; Zhou, Y C* (2012) Thermally activated polarization dynamics under the effects of lattice mismatch strain and external stress in ferroelectric film. J. Appl. Phys., 112 (1). 014112

Full text not available from this repository.

Abstract

The effects of the lattice mismatch between a single crystal substrate and the epitaxial ferroelectric film grown on top of it have been theoretically studied in the context of a thermally activated electric polarization-switching model [see reference Phys. Rev. B 82, 024109 (2010)]. We successfully simulated the time dependent polarization reversal, the coercive field, the polarization switching time and the polarization hysteresis loops as a function of the lattice mismatch, external applied stress, applied electric field and temperature. Our study offers clear analytical relations that can be easily used in future studies of ferroelectrics. Theoretical predications of the model are in good agreement to experimental observations and they reinforce the possibility of using sophisticated thin film fabrication techniques such as lattice mismatch strain to engineer ferroelectric thin films structures and devices with controlled properties.

Item Type:	Article
Keywords:	lattice mismatch strain, strain engineering, Thermally activated polarization dynamics, ferroelectric thin films
Subjects:	Advanced Materials Advanced Materials > Functional Materials
Identification number/DOI:	10.1063/1.4730779
Last Modified:	02 Feb 2018 13:14
URI:	http://eprintspublications.npl.co.uk/id/eprint/5531

Actions (login required)

View Item