Murphy, C E; Yang, L; Ray, S; Yu, L Y*; Knox, S; Stingelin, N* (2011) Wire-bar coating of semiconducting polythiophene / insulating polyethylene blend thin films for organic transistors. J. Appl. Phys., 110 (9). 093523

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Abstract

Organic blend thin films consisting of semiconducting poly(3-hexylthiophene) (P3HT) and insulating high-density polyethylene (HDPE) have been fabricated by novel application of a large area wire-bar coating technique in air. The microstructure of P3HT:HDPE blend films reveals a strong structural dependence on initial composition. Preferential segregation of P3HT towards the film surface is observed for all blend compositions, while P3HT (or P3HT-rich) cylindrical structures enclosed by HDPE (or HDPE-rich) lamellar matrix is distinctive for 50:50 (by weight) blends. The transistors fabricated with P3HT:HDPE blend films show a clear field effect behavior, exhibiting charge carrier mobilities up to 5 x 10-2 cm2/Vs, comparable to the values reported in spin-coated similar blends and of neat P3HT devices. The wire-bar coated blend films and devices are highly repeatable and spatially uniform over large areas (few cm x few cm), demonstrating the suitability of this technique for manufacturing of large area organic electronic devices.

Item Type:	Article
Keywords:	organic semiconductor, polymer blend, phase separation, thin film morphology, transistor
Subjects:	Advanced Materials Advanced Materials > Functional Materials
Identification number/DOI:	10.1063/1.3660779
Last Modified:	02 Feb 2018 13:14
URI:	http://eprintspublications.npl.co.uk/id/eprint/5311

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