Chaure, N B*; Cammidge, A N*; Chambrier, I*; Cook, M J*; Cain, M G; Murphy, C E; Pal, C*; Ray, A K* (2011) High mobility solution processed copper phthalocyanine-based organic field-effect transistors. Sci. Technol. Adv. Mater., 12 (2). 025001

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Abstract

Solution processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilised as an active semiconducting layer in the fabrication of organic field effect transistors in the bottom gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) was found to produce values of 4´10-2 cm2 Vs and 106 for saturation mobility and current modulation (on/off current ratio), respectively. These increases were accompanied by a shift in the value of the threshold voltage from 3V for untreated devices to - 2V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor was also found to have decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were found to be more stable over a 30 day period in air than those without this chemical modification.

Item Type:	Article
Keywords:	organic electronics
Subjects:	Advanced Materials Advanced Materials > Functional Materials
Identification number/DOI:	10.1088/1468-6996/12/2/025001
Last Modified:	02 Feb 2018 13:14
URI:	http://eprintspublications.npl.co.uk/id/eprint/4980

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