Jiang, L D*; Lewis, G*; Spearing, S M*; Jennett, N M; Monclus, M (2010) Development of a low temperature amorphous Si/Ti for integrated MEMS/NEMS. Microelectron. Eng., 87 (5-8). pp. 1259-1262.

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Abstract

Co-sputtering techniques are used to deposit amorphous Si/Ti (a-Si/Ti) composite materials at room temperature with a view to enabling post-CMOS fabrication of MEMS/NEMS. Electrical and mechanical properties of a-Si/Ti are characterised and analysed, benchmarking those of polycrystalline Si (poly-Si) commonly used for MEMS/NEMS. The surface micromachining feasibility of a-Si/Ti is preliminarily investigated using a commonly available Si dry etching process. The promising material and process development suggests that a-Si/Ti composites can potentially be exploited as MEMS/NEMS structural materials with desirable post-CMOS process compatibility, leading to monolithic integration of MEMS/NEMS and ICs.

Item Type:	Article
Keywords:	nanocomposite, nanomechanics, indentation
Subjects:	Advanced Materials Advanced Materials > Surface Engineering
Last Modified:	02 Feb 2018 13:15
URI:	http://eprintspublications.npl.co.uk/id/eprint/4628

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