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Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy.

Li, Y B*; Stradling, R A*; Knight, T*; Birch, J R; Thomas, R H*; Phillips, C C*; Ferguson, I T* (1993) Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxy. Supercond. Sci. Technol., 8. pp. 101-111.

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Abstract

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Item Type: Article
Subjects: Electromagnetics
Last Modified: 02 Feb 2018 13:19
URI: http://eprintspublications.npl.co.uk/id/eprint/2300

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