Kelly, J.; Wang, J.; Ofiare, A.; Ridler, N M; Li, C. (2025) Evaluation of On-Wafer Noise Parameter Measurement Techniques at Cryogenic Temperatures. In: 2025 104th ARFTG Microwave Measurement Conference (ARFTG), 19-22 January 2025, San Juan, PR, USA.

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Abstract

In this paper, we highlight the current techniques for on-wafer noise parameter measurements under cryogenic conditions, and demonstrate their benefits and limitations. We first compared two noise parameter measurement systems at room temperature: one using the internal tuner of the network analyzer; and the other using an external tuner. We then used the internal tuner of the network analyzer for characterizing a GaN high electron mobility transistor at temperatures down to 78 K. The aim of this process was to identify which factors need addressing to improve the accuracy and precision of on-wafer noise parameter measurements at cryogenic temperatures. Stable
noise data is reported up to 16 GHz; the minimum noise figure increased with both temperature and frequency, as expected.
Predictions are also made for problems that may occur at lower temperatures, such as 4 K and mK.

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Electromagnetics > RF and Microwave
Divisions:	Electromagnetic & Electrochemical Technologies
Publisher:	IEEE
Identification number/DOI:	10.1109/ARFTG63706.2025.10989790
Last Modified:	12 Jun 2026 08:58
URI:	https://eprintspublications.npl.co.uk/id/eprint/10442