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Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy.

Su, W T*; Kumar, N; Dai, N*; Roy, D (2016) Nanoscale mapping of intrinsic defects in single-layer graphene using tip-enhanced Raman spectroscopy. Chem. Comms., 52 (53). pp. 8227-8230.

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Abstract

Non-gap mode tip-enhanced Raman spectroscopy (TERS) is used for the first time to successfully map the intrinsic defects in singlelayer graphene with 20 nm spatial resolution. The nanoscale Raman mapping is enabled by an unprecedented near-field to far-field signal contrast of 8.5 at the Ag-coated TERS tip-apex. These results demonstrate the potential of TERS for characterisation of defects in single-layer graphene-based devices at the nanometre length-scale.

Item Type: Article
Keywords: Tip-enhanced Raman spectroscopy, Graphene, Nanoscience, Intrinsic defects
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1039/c6cc01990k
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/7171

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