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Probing individual point defects in graphene via near-field Raman scattering.

Mignuzzi, S; Kumar, N; Brennan, B; Gilmore, I S; Richards, D*; Pollard, A J; Roy, D (2015) Probing individual point defects in graphene via near-field Raman scattering. Nanoscale, 7 (46). pp. 19413-19418.

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Abstract

The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry- dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers

Item Type: Article
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1039/c5nr04664e
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6882

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