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Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts.

Caneva, S*; Weatherup, R S*; Bayer, B C*; Brennan, B*; Spencer, S J; Mingard, K P; Cabrero-Vilatela, A*; Baehtz, C*; Pollard, A J (2015) Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts. Nano Lett., 15 (3). pp. 1867-1875.

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Abstract

The scalable chemical vapor deposition of monolayer hexagonal boron nitride (h-BN) single crystals, with lateral dimensions of ~0.3 mm, and of continuous h-BN monolayer films with large domain sizes (>25 µm) is demonstrated via admixture of Si to Fe catalyst films. A simple thin-film Si/SiO2/Fe catalyst system is used to show that controlled Si diffusion into the Fe catalyst allows exclusive nucleation of monolayer h-BN with very low nucleation densities upon exposure to undiluted borazine. Our systematic in-situ and ex-situ characterization of this catalyst system establishes a basis for further rational catalyst design for compound 2D materials.

Item Type: Article
Keywords: Hexagonal boron nitride (hBN), chemical vapor deposition (CVD), borazine (HBNH)3, silicon dioxide (SiO2), diffusion barrier
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1021/nl5046632
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6595

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