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Investigations of the effect of SiC growth face on graphene thickness uniformity and electronic properties.

Pearce, R; Tan, X; Wang, R; Patel, T; Gallop, J C; Pollard, A J; Yakimova, R*; Hao, L (2015) Investigations of the effect of SiC growth face on graphene thickness uniformity and electronic properties. Surf. Topogr.: Metrol. Prop., 3 (1). p. 15001.

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Abstract

A study of the growth of graphene on the silicon-face (0001) and the carbon-face (000-1) of SiC is presented. The morphology and layer thickness is investigated using atomic force microscopy and scanning Kelvin probe microscopy and demonstrates the more wrinkled and less uniform thickness of the graphene growth on the C-face compared to the Si-face which shows uniform mono-layer growth with some bilayer areas. Raman spectroscopy confirms the predominantly mono layer nature of the Si-face and the inhomogeneous nature of the C-face graphene growth. Raman studies on the C-face show varying overlapping peaks that appear like Bernal stacked graphene but may be due to differences in substrate effects on turbostratic graphene. More recently grown epitaxial graphene samples show a much more uniform growth on the carbon face along with very low bi-layer coverage on the Si-face. Epitaxially grown graphene on the Si-face of SiC is reported to have a high carrier concentration and low mobility however, Van Der Pauw measurements demonstrate the low sheet resistance and relatively low carrier concentration of the graphene on the Si-face, in agreement with microwave measurements and SKPM show the uniformity of the graphene produced on several samples.

Item Type: Article
Keywords: Epitaxial graphene, Carbon face, Raman, SKPM
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1088/2051-672X/3/1/15001
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6476

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