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Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods.

Giusca, C E; Spencer, S J; Shard, A G; Yakimova, R*; Kazakova, O (2014) Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods. Carbon, 69. pp. 221-229.

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Abstract

The properties of epitaxial graphene on the C-face of SiC are investigated using comprehensive structural, chemical and electrical analyses. By matching similar nanoscale features on the surface potential and Raman spectroscopy maps, individual domains have been assigned to graphene patches of 1-5 monolayers thick, as well as bare SiC substrate. Furthermore, these studies revealed that the growth proceeds in an island-like fashion, consistent with the Volmer-Weber growth mode, illustrating also the presence of nucleation sites for graphene domain growth. Raman spectroscopy data shows evidence of large area crystallites (up to 620 nm) and high quality graphene on the C-face of SiC. A comprehensive chemical analysis of the sample has been provided by X-ray photoelectron spectroscopy investigations, further supporting surface potential mapping observations on the thickness of graphene layers. It is shown that for the growth conditions used in this study, the graphene islands should grow thicker than 5 monolayers to form a continuous layer and completely cover the substrate.

Item Type: Article
Keywords: surface potential, epitaxial graphene growth, scanning Kelvin probe microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy
Subjects: Nanoscience
Nanoscience > Nano-Materials
Identification number/DOI: 10.1016/j.carbon.2013.12.018
Last Modified: 02 Feb 2018 13:13
URI: http://eprintspublications.npl.co.uk/id/eprint/6145

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