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Sputtering yields for gold using argon gas cluster ion beams.

Yang, L; Seah, M P; Gilmore, I S (2012) Sputtering yields for gold using argon gas cluster ion beams. J. Phys. Chem. C, 116 (44). pp. 23735-23741.

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Abstract

Measurements are reported of the sputtering yields of gold using energies E of 5, 10 and 20 keV gas cluster ion beams with 100 = n = 5000. In measuring the yields for 30 nm gold layers on silicon wafers with a thin thermal oxide, the analysis is conducted using 25 keV primary ions. The measured signals for 1 = t = 6 show an enhancement arising from the presence of the oxide on the Si wafer but this enhancement is reduced by a factor t-1.38 between the secondary ions so that it may be removed to establish the sputtering dose at the interface. The yield, Y, so determined exhibits a consistent dependence of Y/n on E/n for all beam energies showing that their effects are linearly additive in this regime (i.e. doubling the number of atoms in the cluster at the same energy per atom doubles the yield). An empirical description of these yields is provided for 100 = n = 5000 that is consistent with Sigmund and Claussen's thermal spike model valid here for 1 = n = 10, showing that the maxim yields occur for 10 = n = 200. No indications of a threshold below which sputtering ceases was found for gold but one may exist for SiO2 near n = 5000 for 5 keV incident energy (i.e. below E/n = 1).

Item Type: Article
Keywords: Ar cluster, GCIB, gold, sputtering yield
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1021/jp307203f
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/5648

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