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Analysis of thin films and molecular orientation using cluster SIMS.

Green, F M; Seah, M P; Gilmore, I S; Salter, T L; Spencer, S J (2011) Analysis of thin films and molecular orientation using cluster SIMS. Surf. Interface Anal., 43 (9). pp. 1224-1230.

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Abstract

There is significant evidence that cluster, as opposed to monatomic, ion bombardment gives a non-linear enhancement in yield with increased primary ion cluster size. A study of static SIMS analysis of different film thicknesses gives true static SIMS depth profiling; this allows an interpretation of molecular orientation that is consistent with XPS data. Additionally, we show the non-linear intensity enhancements for Bin+ cluster primary ions. The non-linear enhancements are well described by Sigmund and Claussen's thermal spike model, for ion yields of phenylalanine from thin organic layers on silicon. This increases the capability of SIMS for identification of the chemical structure of molecules at surfaces.

Item Type: Article
Keywords: Static SIMS, primary ion beam clusters, organic depth profiling, cluster SIMS, polyatomic, thermal spike
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1002/sia.3703
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/5243

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