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Energy dependence of the electron attenuation length in silicon dioxide.

Seah, M P; Spencer, S J (2011) Energy dependence of the electron attenuation length in silicon dioxide. Meas. Sci. Technol., 22 (11). 115602

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Abstract

An accurate knowledge of the attenuation lengths of photoelectrons is necessary for quantitative analysis by XPS, especially for the determination of the thicknesses of thin films. Imamura et al have recently reported measurements of the attenuation lengths of electrons in SiO2 in the energy range 150 to 850 eV using synchrotron X-rays. Their analysis depends on known layer thicknesses, measured by X ray reflection (XRR) analysis and the attenuation of the intensity of Si 2p elemental X-ray photoelectrons from the Si wafer substrate, through the oxide layer, along the surface normal. It is shown that both the XRR and X-ray photoemission methods, as used, involve bias effects that, if corrected, may lead to a significantly closer agreement of the experimental data with theoretical predictions. New data on the forward focusing of the Si 2p substrate photoelectrons at 1152 eV, using Mg X-rays, shows the type of consideration required for a fuller analysis.

Item Type: Article
Keywords: surface analysis, surfaces, nanometer layer thickness
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1088/0957-0233/22/11/115602
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/5241

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