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Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application.

Su, W T*; Yang, L; Li, B* (2011) Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application. Appl. Surf. Sci., 257 (7). pp. 2526-2530.

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Abstract

A new ternary rare oxide dielectric LaYbO3 film, had been prepared on silicon wafers or quartz substrates by reactive sputtering method using a La-Yb metal target. A range of analysis techniques was used to determine the optical bandgap, thermal stability, and electrical properties of the samples. It was found the bandgap of LaYbO3 film was about 5.8 eV. And the crystalline temperature for rapid thermal annealing 20 second was between 900 ~ 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO2 and silicate in the interface between silicon wafer and LaYbO3 film. The dielectric constant is about 23 from the calculation of capacitance-voltage curve, which is higher than previously reported La2O3 or Yb2O3 films.

Item Type: Article
Keywords: high-k oxides, ternary rare oxide, LaYbO3, physical properties
Subjects: Nanoscience
Nanoscience > Surface and Nanoanalysis
Identification number/DOI: 10.1016/j.apsusc.2010.10.016
Last Modified: 02 Feb 2018 13:14
URI: http://eprintspublications.npl.co.uk/id/eprint/4895

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