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Single crystalline Ge1-xMnx nanowires as building blocks for nanoelectronics.

van der Meulen, M I*; Petkov, N*; Morris, M A*; Kazakova, O; Xinhai Han*,, ; Wang, K L*; Jacob, A P*; Holmes, J D* (2009) Single crystalline Ge1-xMnx nanowires as building blocks for nanoelectronics. Nano Lett., 9 (1). pp. 50-56.

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Abstract

Magnetically doped Si and Ge nanowires have potential application in future nanowire spin-based devices. Here, we report a supercritical fluid method for producing single crystalline Mn-doped Ge nanowires with a Mn-doping concentration of between 0.5-1.0 atomic % that display ferromagnetism above 300 K and a superior performance with respect to the hole mobility of around 340 cm2/Vs, demonstrating the potential of using these nanowires as building blocks for electronic devices.

Item Type: Article
Subjects: Quantum Phenomena
Quantum Phenomena > Nanophysics
Last Modified: 02 Feb 2018 13:15
URI: http://eprintspublications.npl.co.uk/id/eprint/4561

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