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Analysis of the interface position in C60n+ Secondary Ions Mass Spectrommetry depth profiling.

Green, F M; Shard, A G; Gilmore, I S; Seah, M P (2009) Analysis of the interface position in C60n+ Secondary Ions Mass Spectrommetry depth profiling. Anal. Chem., 81 (1). pp. 75-79.

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Abstract

C60+ has been shown to be extremely successful for SIMS depth profiling, for a wide range of organic materials, causing minimal damage to the molecular information. This opens up a new field of depth profiling for SIMS, in areas such as organic multilayer materials, biological systems and doped organics. Although many of the issues surrounding SIMS depth profiling have already been resolved for atomic ions bombarding inorganics, there are still significant challenges to the quantitative use of C60+ profiling, particularly for organic materials. This work focuses on examining the definition of the interface in a C60+ SIMS depth profile. Firstly it investigates the optimum method to define the organic/inorganic interface position. Differences in methodology to define the interface position can lead to differences of up to 8 nm significantly changing any subsequent calculations. Secondly, it looks into the reasons behind large interfacial widths, i.e. poor depth resolution, seen in C60+ depth profiling. This work shows that, for Irganox 1010, the depth resolution is directly correlated to the roughening of material.

Item Type: Article
Keywords: Static SIMS, primary ion beam clusters, TOF-SIMS, C60 depth profiling, depth resolution, interfaces
Subjects: Nanoscience
Last Modified: 02 Feb 2018 13:15
URI: http://eprintspublications.npl.co.uk/id/eprint/4361

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