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Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: results of a CCQM pilot study.

Seah, M P; Spencer, S J; Bensebaa, F*; Vickridge, I*; Danzebrink, H*; Krumrey, M*; Gross, T*; Oesterle, W*; Wendler, E*; Rheinländer, B*; Azuma, Y*; Kojima, I*; Suzuki, N*; Suzuki, M*; Tanuma, S*; Moon, D W*; Lee, H J*; Hyan Mo Cho*,, ; Chen, H Y*; Wee, A T S*; Osipowicz, T*; Pan, J S*; Jordaan, W A*; Hauert, R*; Klotz, U*; van der Marel, C*; Verheijen, M*; Tamminga, Y*; Jeynes, C*; Bailey, P*; Biswas, S*; Falke, U*; Nguyen, N V*; Chandler-Horowitz, D*; Ehrstein, J R*; Muller, D*; Dura, J A* (2004) Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: results of a CCQM pilot study. Surf. Interface Anal., 36. pp. 1269-1303.

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Abstract

No abstract available

Item Type: Article
Keywords: calibration, ellipsometry, gate oxides, GIXRR, interlaboratory study, MEIS, neutron reflectometry, NRA, RBS, silicon dioxide, SIMS, TEM, thickness measurement, traceability, XPS
Subjects: Nanoscience
Last Modified: 02 Feb 2018 13:16
URI: http://eprintspublications.npl.co.uk/id/eprint/4108

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